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TA329..Q
TA329..Q
Asymmetric Thyristor Advance Information
Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000
APPLICATIONS
s High Frequency Applications s High Power Choppers And Inverters s Welding s Ultrasonic Generators s Induction Heating s 400Hz UPS s PWM Inverters
KEY PARAMETERS VDRM 1400V IT(RMS) 370A ITSM 2000A dVdt 1000V/s dI/dt 1000A/s tq 7.0s
FEATURES
s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assisted Turn-off With Exclusive Bypass Diode s Fully Characterised For Operation up to 40kHz s Directly Compatible With 220-480 A.c. Mains
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage VDRM V 1400 1200 1000 Repetitive Peak Reverse Voltage VRRM V 10 10 10
TA329 14 Q TA329 12 Q TA329 10 Q
Lower voltage grades available.
Outline type code: MU86. See Package Details for further information.
CURRENT AND SURGE RATINGS
Symbol Double Side Cooled IT(RMS) ITSM I2t RMS value Surge (non-repetitive) on-state current I2t for fusing Half sine wave, duty cycle 50%, Tcase = 80oC, Tj = 125C. Tj = 125oC, tp = 1ms, VR = 0 tp 10ms 370 2000 20 x 103 A A A2s Parameter Conditions Max. Units
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THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 4.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 3.6 125 150 4.4
o
Min. dc Anode dc -
Max. 0.085 0.153 0.204 0.02 0.04 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
DYNAMIC CHARACTERISTICS
Symbol VTM IRRM IDRM dV/dt dI/dt Parameter Maximum on-state voltage Peak reverse current Off-state current Maximum linear rate of rise of off-state voltage Rate of rise of on-state current Conditions At 600A peak, Tcase = 125oC At VRRM, Tcase = 125oC At VDRM, Tcase = 125oC To 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20 tr 5s. Non-repetitive Repetitive tq Max. gate assisted turn-off time (with feedback diode) Tj = 125oC, IT(PK) = 200A, tp = 25s (half sine wave), VR = DF451 Diode voltage drop, dV/dt = 600V/s (linear to 60% VDRM), VGK = -5V Tj = 125oC, ITM = 100A, tp > 100s, dIR/dt = 30A/s, VR = 1V, dV/dt = 600V/s (linear to 60% VDRM), Gate open. Min. Max. 2.5 30 1 1000 1000 500 7 Units V mA mA V/s A/s A/s s
tq
Max. turn-off time (with feedback diode)
-
10
s
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Peak reverse gate voltage Peak forward gate current Peak gate power Average gate power Conditions VDWM = 12V, RL = 3, Tcase = 25oC VDWM = 12V, RL = 3, Tcase = 25oC Typ. Max. 4 250 7 10 50 15 Units V mA V A W W
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CURVES
Notes: 1. VD 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1F, R = 33. 4. Double side cooled.
Fig.1 Energy per pulse for sinusoidal pulses.
Notes: 1. VD 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1F, R = 33. 4. Double side cooled.
Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65C.
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Notes: 1. VD 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1F, R = 33. 4. Double side cooled.
Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90C.
Notes: 1. dI/dt = 100A/s. 2. VD 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1F, R = 33. 5. Double side cooled.
Fig.4 Energy per pulse for trapezoidal pulses
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Notes: 1. dI/dt = 100A/s. 2. VD 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1F, R = 33. 5. Double side cooled.
Fig.5 Maximum allowable peak on-state current vs pulse width for Tcase = 65C.
Notes: 1. dI/dt = 100A/s. 2. VD 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1F, R = 33. 5. Double side cooled.
Fig.6 Maximum allowable peak on-state current vs pulse width for Tcase = 90C.
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Fig.7 Maximum on-state conduction characteristic
Fig.8 Non-repetitive sub-cycle surge on-state current and I2t rating.
Fig.9 Typical variation of effective turn-off time (tq) with negative gate bias.
Fig.10 Reverse gate characteristics
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Fig.11 Gate trigger characteristics
Fig.12 Transient thermal impedance - junction to case
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TA329..Q PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes 3.6 x 2.0 deep (in both electrodes)
6.3
Cathode tab Cathode O 42 max O19nom
O1.5 Gate O19nom O 38 max
Anode
Nominal weight: 50g Clamping force: 3.5kN 10% Lead length: 250mm Package outine type code: MU86
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics Recommendations for clamping power semiconductors The effect of temperature on thyristor performance Thyristor and diode measurement with a multi-meter Turn-on performance of thyristors in parallel Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4840 AN4839 AN4870 AN4853 AN4999 AN5001
15.0 14.0
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4680-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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